Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate
During the process of heteroepitaxial growth, if the lattice constant of the growing film differs from that of the substrate, the wafer surface bows, regardless of whether the lattice mismatch occurs or not. As the growth in large-scale wafers speeds up, bowing effects are becoming more and more imp...
Gorde:
| Egile Nagusiak: | , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Wiley
2013-01-01
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| Saila: | Advances in Condensed Matter Physics |
| Sarrera elektronikoa: | http://dx.doi.org/10.1155/2013/465498 |
| Etiketak: |
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