Optical and Morphological Characterization of Nanoscale Oxides Grown in Low-Energy H⁺-Implanted c-Silicon

Nanoscale oxides grown in c-silicon, implanted with low-energy (2 keV) H⁺ ions and fluences ranging from 10¹³ cm⁻² to 10¹⁵ cm⁻² by RF plasma immersion implantation (PII), have been investigated. The oxidation of the implanted Si layers proceeded...

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Bibliografiske detaljer

Principais autores:	Anna Szekeres, Sashka Alexandrova, Mihai Anastasescu, Hermine Stroescu, Mariuca Gartner, Peter Petrik
Format:	Artigo
Sprog:	Inglês
Udgivet:	MDPI AG 2024-07-01
Serier:	Micro
Fag:	low-energy H<sup>+</sup> ion implantation of c-Si dry oxidation of H<sup>+</sup>-implanted silicon UV–vis–IR spectroscopic ellipsometry electroreflectance spectroscopy AFM imaging
Online adgang:	https://www.mdpi.com/2673-8023/4/3/27
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