Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...

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Bibliografski detalji

Glavni autori:	Abhinay Sandupatla, Subramaniam Arulkumaran, Ng Geok Ing, Shugo Nitta, John Kennedy, Hiroshi Amano
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2020-05-01
Serija:	Micromachines
Teme:	GaN-on-GaN schottky barrier diodes high-energy α-particle detection low voltage thick depletion width detectors
Online pristup:	https://www.mdpi.com/2072-666X/11/5/519
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