Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing
The reliability of GaN-based devices operating under high temperatures is crucial for their application in extreme environments. To identify the fundamental mechanisms behind high-temperature degradation, we investigated GaN-on-sapphire Schottky barrier diodes (SBDs) under simultaneous heating and e...
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| Hauptverfasser: | , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
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MDPI AG
2025-02-01
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| Schriftenreihe: | Micromachines |
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| Online-Zugang: | https://www.mdpi.com/2072-666X/16/3/242 |
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