Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing
The reliability of GaN-based devices operating under high temperatures is crucial for their application in extreme environments. To identify the fundamental mechanisms behind high-temperature degradation, we investigated GaN-on-sapphire Schottky barrier diodes (SBDs) under simultaneous heating and e...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
MDPI AG
2025-02-01
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| Σειρά: | Micromachines |
| Θέματα: | |
| Διαθέσιμο Online: | https://www.mdpi.com/2072-666X/16/3/242 |
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