Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...
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| Principais autores: | , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2020-05-01
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| Serier: | Micromachines |
| Fag: | |
| Online adgang: | https://www.mdpi.com/2072-666X/11/5/519 |
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