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DFT-based precursor screening for selective atomic layer deposition on Cu/SiO2 substrates

Selective atomic layer deposition(ALD) exhibits significant advantages in the fabrication of nanoscale materials, fundamentally leveraging the differential reaction rates of precursors across distinct regions. This study focuses on the deposition process alignment of dielectric materials in semicond...

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Principais autores: Yi'ao GE, Boxuan LI, Yanwei WEN, Kun CAO, Bin SHAN, Rong CHEN
Format: Artigo
Sprog:Chinês
Udgivet: Shanghai Institute of Microsystem and Information Technology 2025-06-01
Serier:Gongneng cailiao yu qijian xuebao
Fag:
selective atomic layer deposition
density functional theory
microreaction kinetics
precursor screening
Online adgang:https://www.jfmd.net.cn/article/doi/10.20027/j.gncq.2025.0025
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