DFT-based precursor screening for selective atomic layer deposition on Cu/SiO2 substrates

Selective atomic layer deposition(ALD) exhibits significant advantages in the fabrication of nanoscale materials, fundamentally leveraging the differential reaction rates of precursors across distinct regions. This study focuses on the deposition process alignment of dielectric materials in semicond...

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Xehetasun bibliografikoak

Egile Nagusiak:	Yi'ao GE, Boxuan LI, Yanwei WEN, Kun CAO, Bin SHAN, Rong CHEN
Formatua:	Artigo
Hizkuntza:	Chinês
Argitaratua:	Shanghai Institute of Microsystem and Information Technology 2025-06-01
Saila:	Gongneng cailiao yu qijian xuebao
Gaiak:	selective atomic layer deposition density functional theory microreaction kinetics precursor screening
Sarrera elektronikoa:	https://www.jfmd.net.cn/article/doi/10.20027/j.gncq.2025.0025
Etiketak:	Etiketa erantsi Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!