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Efficient mmWave PA in 90 nm CMOS: Stacked-Inverter Topology, L/T Matching, and EM-Validated Results

In this study, we present the design and analysis of a stacked inverter-based millimeter-wave (mmWave) power amplifier (PA) in 90 nm CMOS-targeting wideband Q-band operation. The PA employs two PMOS and two NMOS devices in a fully stacked inverter topology to distribute device stress, remove the nee...

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Autores principales: Nusrat Jahan, Ramisha Anan, Jannatul Maua Nazia
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI AG 2025-12-01
Colección:Chips
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Acceso en línea:https://www.mdpi.com/2674-0729/4/4/52
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