Efficient mmWave PA in 90 nm CMOS: Stacked-Inverter Topology, L/T Matching, and EM-Validated Results
In this study, we present the design and analysis of a stacked inverter-based millimeter-wave (mmWave) power amplifier (PA) in 90 nm CMOS-targeting wideband Q-band operation. The PA employs two PMOS and two NMOS devices in a fully stacked inverter topology to distribute device stress, remove the nee...
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| Autores principales: | , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2025-12-01
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| Colección: | Chips |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2674-0729/4/4/52 |
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