<italic>H</italic>-Band Broadband Balanced Power Amplifier in 250-nm InP HBT Technology Using Impedance-Transforming Balun

A broadband power amplifier in a 250-nm InP HBT technology is presented, working at full <inline-formula> <tex-math notation="LaTeX">$H$ </tex-math></inline-formula>-band (220&#x2013;320 GHz). A cascode transistor is employed as a power cell to achieve high gain and power at <inline-formula> <tex-ma...

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Huvudupphov:	Yeongmin Jang, Youngchae Jeon, Jinho Jeong
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	IEEE 2022-01-01
Serie:	IEEE Access
Ämnen:	Bandwidth HBT IC InP power amplifier terahertz
Länkar:	https://ieeexplore.ieee.org/document/9931108/
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