Methods used to develop the light emitting nanostructures with InGaAs/GaAs quantum wells

Light-emitting diodes based on InGaAs/GaAs quantum wells (QW) were fabricated and investigated. Cover layers of GaAs (15, 25, 35 nm) were deposited by high temperature (630 ˚C) epitaxy. Ferromagnetic Co metal layer was deposited by 60 ˚C and 90 ˚C and used as a spin injector. Incorporation of a tunn...

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Detalhes bibliográficos

Autor principal:	S. Saeid
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Povolzhskiy State University of Telecommunications & Informatics 2017-01-01
coleção:	Физика волновых процессов и радиотехнические системы
Assuntos:	сpolarization spin injector tunnel-thin barrier spin-polarized charge carriers diffusion penetration nanostructure quantum wells
Acesso em linha:	https://journals.ssau.ru/pwp/article/viewFile/7106/6965
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