Experimental and Modeling Study on the High-Performance p⁺⁺-GaAs/n⁺⁺-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p⁺⁺-GaAs/n⁺⁺-GaAs tunnel...

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Autors principals:	Yudan Gou, Jun Wang, Yang Cheng, Yintao Guo, Xiao Xiao, Heng Liu, Shaoyang Tan, Li Zhou, Huomu Yang, Guoliang Deng, Shouhuan Zhou
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2020-11-01
Col·lecció:	Crystals
Matèries:	tunnel junction MOCVD quantum well co-doping solar cells
Accés en línia:	https://www.mdpi.com/2073-4352/10/12/1092
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