Methods used to develop the light emitting nanostructures with InGaAs/GaAs quantum wells
Light-emitting diodes based on InGaAs/GaAs quantum wells (QW) were fabricated and investigated. Cover layers of GaAs (15, 25, 35 nm) were deposited by high temperature (630 ˚C) epitaxy. Ferromagnetic Co metal layer was deposited by 60 ˚C and 90 ˚C and used as a spin injector. Incorporation of a tunn...
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| Автор: | |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Povolzhskiy State University of Telecommunications & Informatics
2017-01-01
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| Серія: | Физика волновых процессов и радиотехнические системы |
| Предмети: | |
| Онлайн доступ: | https://journals.ssau.ru/pwp/article/viewFile/7106/6965 |
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