Dipolar spin relaxation of divacancy qubits in silicon carbide
Abstract Divacancy spins implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of these important defects, for instance, spin relaxation has not been thoroughly studied yet....
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| Principais autores: | , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Portfolio
2021-12-01
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| סדרה: | npj Computational Materials |
| גישה מקוונת: | https://doi.org/10.1038/s41524-021-00673-8 |
| תגים: |
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