Nuclear spin quantum memory in silicon carbide
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g., vanadium, emit in one of the telecom bands, but the large ground-state hyperfine manifold poses a problem for applications which require pure quantum states....
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Physical Society
2022-08-01
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| coleção: | Physical Review Research |
| Acesso em linha: | http://doi.org/10.1103/PhysRevResearch.4.033107 |
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