Fabrication and quantum sensing of spin defects in silicon carbide
In the past decade, color centers in silicon carbide (SiC) have emerged as promising platforms for various quantum information technologies. There are three main types of color centers in SiC: silicon-vacancy centers, divacancy centers, and nitrogen-vacancy centers. Their spin states can be polarize...
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| Principais autores: | , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Frontiers Media S.A.
2023-09-01
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| coleção: | Frontiers in Physics |
| Assuntos: | |
| Acesso em linha: | https://www.frontiersin.org/articles/10.3389/fphy.2023.1270602/full |
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