Differential Hall Effect Metrology for Electrical Characterization of Advanced Semiconductor Layers
Semiconductor layers employed in fabricating advanced node devices are becoming thinner and their electrical properties are diverging from those established for highly crystalline standards. Since these properties also change as a function of depth within the film, accurate carrier profiling solutio...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2024-10-01
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| Col·lecció: | Metrology |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2673-8244/4/4/34 |
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