Nanotribological Characteristics of the Al Content of Al<sub>x</sub>Ga<sub>1−x</sub>N Epitaxial Films
The nanotribological properties of aluminum gallium nitride (Al<sub>x</sub>Ga<sub>1−x</sub>N) epitaxial films grown on low-temperature-grown GaN/AlN/Si substrates were investigated using a nanoscratch system. It was confirmed that the Al compositions played an important role, which was directly infl...
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| Autores principales: | , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2023-10-01
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| Colección: | Nanomaterials |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2079-4991/13/21/2884 |
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