In-Built N⁺ Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance

In this paper, we present an in-built N⁺ pocket electrically doped tunnel FET (ED-TFET) based on the polarity bias concept that enhances the DC and analog/RF performance. The proposed device begins with a MOSFET like structure (n-p-n) with a control gate (CG) and a polarity gate (PG). The...

ver descrição completa

Detalhes bibliográficos

Principais autores:	Jun Li, Ying Liu, Su-fen Wei, Chan Shan
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2020-10-01
coleção:	Micromachines
Assuntos:	band-to-band tunneling (BTBT) polarity gate (PG) ON-state current electrically doping tunnel FETs (TFETs)
Acesso em linha:	https://www.mdpi.com/2072-666X/11/11/960
Tags:	Adicionar Tag Sem tags, seja o primeiro a adicionar uma tag!