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Intelligent Proximity Correction Enabled Large-Area Metasurfaces by KrF Photolithography

Model-based optical proximity correction (OPC) is a widely adopted resolution enhancement technique that compensates for lithography proximity effects by adjusting and correcting mask pattern shapes. However, its application to large-area, high-density patterns such as metasurfaces is constrained by...

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Principais autores: Hsueh-Li Liu, Sheng-Hsiang Su, Po-Kai Chang, You-Chia Chang, Yao-Wei Huang, Chia-Wei Chang, Tsai-Ming Huang, Chun-Chi Chen, Wen-Hsien Huang, Jia-Min Shieh, Peichen Yu
Format: Artigo
Sprog:Inglês
Udgivet: IEEE 2025-01-01
Serier:IEEE Access
Fag:
Metasurface
photolithography
optical proximity correction
deep-learning
U-net
Online adgang:https://ieeexplore.ieee.org/document/11241980/
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