Intelligent Proximity Correction Enabled Large-Area Metasurfaces by KrF Photolithography

Model-based optical proximity correction (OPC) is a widely adopted resolution enhancement technique that compensates for lithography proximity effects by adjusting and correcting mask pattern shapes. However, its application to large-area, high-density patterns such as metasurfaces is constrained by...

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Autors principals:	Hsueh-Li Liu, Sheng-Hsiang Su, Po-Kai Chang, You-Chia Chang, Yao-Wei Huang, Chia-Wei Chang, Tsai-Ming Huang, Chun-Chi Chen, Wen-Hsien Huang, Jia-Min Shieh, Peichen Yu
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2025-01-01
Col·lecció:	IEEE Access
Matèries:	Metasurface photolithography optical proximity correction deep-learning U-net
Accés en línia:	https://ieeexplore.ieee.org/document/11241980/
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