A Novel Bidirectional AlGaN/GaN ESD Protection Diode
Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the...
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| Principais autores: | , , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI AG
2022-01-01
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| Series: | Micromachines |
| Assuntos: | |
| Acceso en liña: | https://www.mdpi.com/2072-666X/13/1/135 |
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