Effects of Etching Variations on Ge/Si Channel Formation and Device Performance
Abstract During the formation of Ge fin structures on a silicon-on-insulator (SOI) substrate, we found that the dry etching process must be carefully controlled. Otherwise, it may lead to Ge over-etching or the formation of an undesirable Ge fin profile. If the etching process is not well controlled...
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| Hauptverfasser: | , , |
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| Format: | Artigo |
| Sprache: | Inglês |
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SpringerOpen
2018-07-01
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| Schriftenreihe: | Nanoscale Research Letters |
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| Online-Zugang: | http://link.springer.com/article/10.1186/s11671-018-2631-1 |
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