Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Abstract The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si‐based integrated circuits and GaN‐enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct crystal symmetries typically bring a...

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Detalles Bibliográficos

Principais autores:	Dongdong Liang, Bei Jiang, Zhetong Liu, Zhaolong Chen, Yaqi Gao, Shenyuan Yang, Rui He, Lulu Wang, Junxue Ran, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Jingyu Sun, Tongbo Wei
Formato:	Artigo
Idioma:	Inglês
Publicado:	Wiley 2024-05-01
Series:	Advanced Science
Assuntos:	GaN graphene monolithic integration quasi van der waals epitaxy Si(100)
Acceso en liña:	https://doi.org/10.1002/advs.202305576
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