Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS<sub>2</sub> Layers by Plasma-Assisted Molecular Beam Epitaxy
The van der Waals epitaxy of wafer-scale GaN on 2D MoS<sub>2</sub> and the integration of GaN/MoS<sub>2</sub> heterostructures were investigated in this report. GaN films have been successfully grown on 2D MoS<sub>2</sub> layers using three different Ga fluxes via a plasma-assisted molecular beam ep...
Shranjeno v:
| Principais autores: | , , , |
|---|---|
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2024-04-01
|
| Serija: | Nanomaterials |
| Teme: | |
| Online dostop: | https://www.mdpi.com/2079-4991/14/8/732 |
| Oznake: |
Brez oznak, prvi označite!
|