Radiation hardness of silicon doped by germanium with high concentration of free oxygen
Radiation hardness of Czochralski grown n-type silicon samples, doped by germanium (NGe = 2 ⋅ 1020 cm-3) and without that was investigated after irradiaton by fast neutrons of WWR-M reactor at room temperature.The dependence of effective carrier concentration on fluence was described in the framew...
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| Principais autores: | , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2006-06-01
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| Serier: | Ядерна фізика та енергетика |
| Online adgang: | http://jnpae.kinr.kiev.ua/17(1)/Articles_PDF/jnpae-2006-1(17)-0060-Varentsov.pdf |
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