Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs
We employ a circular (Corbino) thin-film transistor (TFT) structure, in which the outer-ring is the drain and the inner-ring is the source, to improve the stability of amorphous-indium-gallium- zinc-oxide TFTs under tensile bending strain. We attribute the stability improvement to a more uniform ele...
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| Principais autores: | , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
IEEE
2017-01-01
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| Serier: | IEEE Journal of the Electron Devices Society |
| Fag: | |
| Online adgang: | https://ieeexplore.ieee.org/document/8036177/ |
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