Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film
This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an amorphous InGaZnO<sub>4</sub> (a-IGZO) channel layer. TFTs with single-layer Ta<sub>2</sub>O<sub>5</sub> and dual-layer Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub> gate insulators were fabricated on a glas...
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| Hlavní autoři: | , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2022-10-01
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| Edice: | Metals |
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| On-line přístup: | https://www.mdpi.com/2075-4701/12/10/1663 |
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