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A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel

In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. The channels of the new device consist of a vertical subchannel and two horizontal subchannels. The two horizontal subchannels are manufactured over the vertical subchannel by using...

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Bibliográfalaš dieđut
Váldodahkkit: Zening Mo, Zhidi Jiang, Jianping Hu
Materiálatiipa: Artigo
Giella:Inglês
Almmustuhtton: Wiley 2022-01-01
Ráidu:Journal of Electrical and Computer Engineering
Liŋkkat:http://dx.doi.org/10.1155/2022/1432545
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