A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel
In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. The channels of the new device consist of a vertical subchannel and two horizontal subchannels. The two horizontal subchannels are manufactured over the vertical subchannel by using...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley
2022-01-01
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| Col·lecció: | Journal of Electrical and Computer Engineering |
| Accés en línia: | http://dx.doi.org/10.1155/2022/1432545 |
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