T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)
In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections. The top gate is above the horizontal channel, while the front gate and back gate are on either side of the vertical chan...
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| Principais autores: | , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2020-01-01
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| Serija: | Micromachines |
| Teme: | |
| Online dostop: | https://www.mdpi.com/2072-666X/11/1/64 |
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