Numerical Investigation on Electrothermal Performance of AlGaN/GaN HEMTs with Nanocrystalline Diamond/SiNx Trench Dual-Passivation Layers
In this work, AlGaN/GaN high-electron-mobility transistors (HEMTs) with a nanocrystalline diamond (NCD)/SiN<sub>x</sub> trench dual-passivated (TDP) structure were promoted, which demonstrated superior performance with a higher saturation output current (<i>I</i><sub>dss</sub>) of 1.266 A/mm, a high...
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| Glavni autori: | , , , , , , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2025-04-01
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| Serija: | Nanomaterials |
| Teme: | |
| Online pristup: | https://www.mdpi.com/2079-4991/15/8/574 |
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