Improvement in the planarization of 4H-SiC(0001) achieved by photo-assisted chemical mechanical polishing (P-CMP) using nano TiO2-based composite abrasive with heterostructure
The planarization of silicon carbide (SiC), which is crucial for manufacturing power devices resilient to harsh working environments, has garnered significant attention. The utilization of titanium dioxide (TiO2)-based heterogeneous photocatalysts offers a promising avenue for achieving efficient po...
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| Asıl Yazarlar: | , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Tsinghua University Press
2025-07-01
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| Seri Bilgileri: | Friction |
| Konular: | |
| Online Erişim: | https://www.sciopen.com/article/10.26599/FRICT.2025.9440993 |
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