A Novel p-LDMOS Additionally Conducting Electrons by Control ICs
A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the breakdown voltage (BV) and the specific on-re...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IEEE
2019-01-01
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| Col·lecció: | IEEE Journal of the Electron Devices Society |
| Matèries: | |
| Accés en línia: | https://ieeexplore.ieee.org/document/8769879/ |
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