The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction
A novel lateral double diffused metal oxide semiconductor (LDMOS) with trench oxide layer, featuring a lateral super junction structure based on the silicon-on-insulator technology is proposed. On the one hand, the lateral super junction combined with the TOL can enhance both the surface and the bul...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
IEEE
2018-01-01
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| Цуврал: | IEEE Journal of the Electron Devices Society |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://ieeexplore.ieee.org/document/8370031/ |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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