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Growth of c-axis AlN sputtered films on silicon-based substrates using 2D-TMD as nucleation layer

In RF filters based on bulk acoustic wave (BAW) resonators, AlN is a well-known piezo-active layer stacked between two molybdenum electrodes. The crystalline quality, e.g., the film texture along the c -axis of the AlN hexagonal lattice, has a direct effect on RF performances. However, the current c...

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Autori principali: J Patouillard, N Vaxelaire, M Bernard, R Gassilloud, A Dussaigne, B Hyot, S Cadot, N Bernier, A Mantoux, E Blanquet, C Raynaud, F Gianesello
Natura: Artigo
Lingua:Inglês
Pubblicazione: IOP Publishing 2026-01-01
Serie:JPhys Materials
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Accesso online:https://doi.org/10.1088/2515-7639/ae453e
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