Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates

AlGaN quantum wells (QWs) emitting at 265 nm were fabricated on face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) templates with n-AlGaN and different homoepitaxial AlN thicknesses (200–2000 nm) by metalorganic vapor phase epitaxy (MOVPE). Thicker MOVPE-AlN led to higher dislocation densities...

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Autors principals:	Ryota Akaike, Kenjiro Uesugi, Kohei Shima, Shigefusa F. Chichibu, Akira Uedono, Takao Nakamura, Hideto Miyake
Format:	Artigo
Idioma:	Inglês
Publicat:	IOP Publishing 2025-01-01
Col·lecció:	Applied Physics Express
Matèries:	face-to-face annealed sputter-deposited AlN quantum well photoluminescence AlGaN positron annihilation time resolved photoluminescence
Accés en línia:	https://doi.org/10.35848/1882-0786/ade2b7
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