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Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introducti...

Whakaahuatanga katoa

I tiakina i:
Ngā taipitopito rārangi puna kōrero
Ngā kaituhi matua: Kai Ding, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç
Hōputu: Artigo
Reo:Inglês
I whakaputaina: MDPI AG 2017-10-01
Rangatū:Crystals
Ngā marau:
Urunga tuihono:https://www.mdpi.com/2073-4352/7/10/300
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