Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introducti...
Tallennettuna:
| Päätekijät: | , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI AG
2017-10-01
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| Sarja: | Crystals |
| Aiheet: | |
| Linkit: | https://www.mdpi.com/2073-4352/7/10/300 |
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