Structurally optimized SiC CMOS FinFET for high-temperature and low-power SoC logic integration

Abstract A high-temperature-operable binary inverter was designed through structural optimization of SiC-based CMOS FinFETs using 3D TCAD simulations. A FinFET architecture was incorporated into SiC CMOS with an optimized fin structure to overcome the critical challenges of high subthreshold swing (...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής

Κύριοι συγγραφείς:	Tae Seong Kwon, Young Jun Yoon, Do Yeon Park, Jong-Ho Bae, Young Suh Song, Hyoung Woo Kim, Jae Hwa Seo, Sung Yun Woo
Μορφή:	Artigo
Γλώσσα:	Inglês
Έκδοση:	Nature Portfolio 2025-08-01
Σειρά:	Scientific Reports
Θέματα:	Silicon-carbide (SiC) CMOS FinFET High-temperature application Self-heating Binary inverter
Διαθέσιμο Online:	https://doi.org/10.1038/s41598-025-14081-1
Ετικέτες:	Προσθήκη ετικέτας Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!