Some Aspects of Hot Carrier Photocurrent across GaAs <i>p</i>-<i>n</i> Junction
The photocurrent across crystalline GaAs <i>p-n</i> junction induced by Nd:YAG laser radiation was investigated experimentally. It is established that the displacement current is dominant at reverse and low forward bias voltages in the case of pulsed excitation. This indicates that hot carriers do n...
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| 主要な著者: | , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI AG
2024-06-01
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| シリーズ: | Inorganics |
| 主題: | |
| オンライン･アクセス: | https://www.mdpi.com/2304-6740/12/6/174 |
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