Some Aspects of Hot Carrier Photocurrent across GaAs <i>p</i>-<i>n</i> Junction
The photocurrent across crystalline GaAs <i>p-n</i> junction induced by Nd:YAG laser radiation was investigated experimentally. It is established that the displacement current is dominant at reverse and low forward bias voltages in the case of pulsed excitation. This indicates that hot carriers do n...
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| Format: | Artigo |
| Sprache: | Inglês |
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MDPI AG
2024-06-01
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| Schriftenreihe: | Inorganics |
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| Online-Zugang: | https://www.mdpi.com/2304-6740/12/6/174 |
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