Observation of pn junction in GaAs using defocus CBED pattern
Nanoscale analysis of pn-junctions in crucial semiconductors like GaAs is vital but challenging, especially for strained hetero-structures where methods like holography and differential phase contrast-scanning transmission electron microscopy face limitations. This study demonstrates the application...
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| Autori principali: | , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IOP Publishing
2025-01-01
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| Serie: | JPhys Materials |
| Soggetti: | |
| Accesso online: | https://doi.org/10.1088/2515-7639/ae220f |
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