Observation of pn junction in GaAs using defocus CBED pattern
Nanoscale analysis of pn-junctions in crucial semiconductors like GaAs is vital but challenging, especially for strained hetero-structures where methods like holography and differential phase contrast-scanning transmission electron microscopy face limitations. This study demonstrates the application...
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| 主要な著者: | , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
IOP Publishing
2025-01-01
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| シリーズ: | JPhys Materials |
| 主題: | |
| オンライン･アクセス: | https://doi.org/10.1088/2515-7639/ae220f |
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