Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual sub...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Ben Li, Xuewei Zhao, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Tianchun Ye, Henry H. Radamson
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2022-08-01
Цуврал:	Nanomaterials
Нөхцлүүд:	Si photonics InAs/GaAs lasers epitaxial growth GaAs virtual substrate
Онлайн хандалт:	https://www.mdpi.com/2079-4991/12/15/2704
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!