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Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studi...

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Автори: Mikhail O. Petrushkov, Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev, Anton K. Gutakovskii, Victor V. Atuchin, Valery V. Preobrazhenskii
Формат: Artigo
Мова:Inglês
Опубліковано: MDPI AG 2022-12-01
Серія:Nanomaterials
Предмети:
low-temperature GaAs
molecular-beam epitaxy
III-V/Si integration
self-assembled quantum dots
dislocation filter
Онлайн доступ:https://www.mdpi.com/2079-4991/12/24/4449
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