A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors
Theoretical study and software simulation on the sensitivity of silicon nanowires (SiNWs) field effect transistor (FET) sensors in terms of surface-to-volume ratio, depletion ratio, surface state and lattice quality are carried out. Generally, SiNWs-FET sensors with triangular cross-sections are mor...
I tiakina i:
| Ngā kaituhi matua: | , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
MDPI AG
2021-04-01
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| Rangatū: | Biosensors |
| Ngā marau: | |
| Urunga tuihono: | https://www.mdpi.com/2079-6374/11/4/121 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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