A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors
Theoretical study and software simulation on the sensitivity of silicon nanowires (SiNWs) field effect transistor (FET) sensors in terms of surface-to-volume ratio, depletion ratio, surface state and lattice quality are carried out. Generally, SiNWs-FET sensors with triangular cross-sections are mor...
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| Principais autores: | , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2021-04-01
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| Serier: | Biosensors |
| Fag: | |
| Online adgang: | https://www.mdpi.com/2079-6374/11/4/121 |
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