Analysis of Schottky barrier height in Al/p-SiNWs/Al and Al/n-SiNWs/Al heterojunction diodes and its influence on charge transport characteristics
This study investigates two types of silicon nanowires (SiNWs)-based Metal-Semiconductor-Metal (MSM) devices are synthesized: Al/p-SiNWs/Al and Al/n-SiNWs/Al in an effort to compare the electrical behavior of p-type and n-type SiNWs. The nanowires are prepared via metal-catalized chemical etching (M...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Elsevier
2026-04-01
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| Col·lecció: | Next Materials |
| Matèries: | |
| Accés en línia: | http://www.sciencedirect.com/science/article/pii/S2949822826002716 |
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