Analysis of Schottky barrier height in Al/p-SiNWs/Al and Al/n-SiNWs/Al heterojunction diodes and its influence on charge transport characteristics

This study investigates two types of silicon nanowires (SiNWs)-based Metal-Semiconductor-Metal (MSM) devices are synthesized: Al/p-SiNWs/Al and Al/n-SiNWs/Al in an effort to compare the electrical behavior of p-type and n-type SiNWs. The nanowires are prepared via metal-catalized chemical etching (M...

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Detalhes bibliográficos

Principais autores:	Anand Kumar, Vikas Kashyap, Avadhesh Kumar Sharma, Kapil Saxena
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Elsevier 2026-04-01
Colecção:	Next Materials
Assuntos:	SiNWs MSM devices MCCE method Heterojunction I-V measurements
Acesso em linha:	http://www.sciencedirect.com/science/article/pii/S2949822826002716
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